PART |
Description |
Maker |
DS3070W-100 |
3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock 3.3V的单16Mb的非易失SRAM,带有时
|
Maxim Integrated Products, Inc.
|
KMM53616000BK |
16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1
|
Samsung Semiconductor
|
24AA02-I/OT 24LC02B-I/MS 24LC02B-E/P 24LC02B-I/ST |
SERIAL EEPROM|256X8|CMOS|TSSOP|8PIN|PLASTIC SERIAL EEPROM|256X8|CMOS|TSOP|6PIN|PLASTIC 3.3V Single-Piece 1Mb Nonvolatile SRAM 3.3V Single-Piece 256Kb Nonvolatile SRAM Single/Dual/Triple/Quad DS3/E3 Single-Chip Transceivers Single/Dual/Triple/Quad ATM/Packet PHYs for DS3/E3/STS-1 串行EEPROM的| 256X8 |的CMOS |双酯| 8引脚|塑料 Single-Piece 1Mb Nonvolatile SRAM 串行EEPROM的| 256X8 |的CMOS | TSSOP封装| 8引脚|塑料 2k x 8 3V/5V Operation Static RAM 串行EEPROM的| 256X8 |的CMOS | TSSOP封装| 8引脚|塑料 Single/Dual/Triple/Quad ATM/Packet PHYs with Built-In LIU 串行EEPROM的| 256X8 |的CMOS |专科| 8引脚|塑料
|
Microchip Technology, Inc.
|
DS2030W-100 |
3.3V Single-Piece 256k Nonvolatile SRAM
|
Maxim Integrated Products
|
DS2045Y DS2045AB |
Single-Piece 1Mb Nonvolatile SRAM
|
Maxim
|
MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V1MV18D |
16Mb SYNCBURST?SRAM 16Mb SYNCBURST?/a> SRAM 16Mb SYNCBURSTSRAM 16Mb SYNCBURST?/a> SRAM
|
Micron Technology, Inc.
|
MT58V1MV18D MT58L512Y36D MT58V512V32D MT58V512V36D |
16Mb SYNCBURST SRAM
|
Micron Technology
|
HY64UD16162M |
Mobile PSRAM - 16Mb
|
Hynix Semiconductor
|
R1LV1616R0709 R1LV1616RBG-7S R1LV1616RBG-8S R1LV16 |
16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit)
|
Renesas Electronics Corporation
|
VG3617161DT VG3617161DT-10 VG3617161DT-6 VG3617161 |
16Mb CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
IS41C44002C |
16Mb DRAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc
|